Print Page
SKM 400 GB 128 D
IGBT Module, 520 A, 2.35 V, 150 °C, SEMITRANS 3
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSEMIKRON
Manufacturer Part NoSKM 400 GB 128 D
Newark Part No.88K1992
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 400 GB 128 D
Newark Part No.88K1992
Technical Datasheet
IGBT Configuration-
Transistor PolarityN Channel
DC Collector Current520A
Continuous Collector Current520A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage2.35V
Power Dissipation Pd-
Power Dissipation-
Junction Temperature, Tj Max150°C
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Transistor Case StyleSEMITRANS 3
No. of Pins7Pins
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max1.2kV
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
-
DC Collector Current
520A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation Pd
-
Junction Temperature, Tj Max
150°C
Operating Temperature Max
150°C
No. of Pins
7Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Collector Current
520A
Collector Emitter Saturation Voltage
2.35V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Transistor Case Style
SEMITRANS 3
IGBT Termination
Stud
Collector Emitter Voltage Max
1.2kV
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate