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Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKM 100GAL123DCopy
Newark Part No.88K1990
Technical Datasheet
IGBT Configuration-
Transistor PolarityN Channel
Continuous Collector Current100A
DC Collector Current100A
Collector Emitter Saturation Voltage Vce(on)1.2kV
Collector Emitter Saturation Voltage3V
Power Dissipation-
Power Dissipation Pd-
Collector Emitter Voltage V(br)ceo1.2kV
Operating Temperature Max150°C
Junction Temperature, Tj Max150°C
Transistor Case StyleModule
No. of Pins5Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2kV
IGBT TechnologyNPT IGBT [Ultrafast]
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
IGBT Configuration
-
Continuous Collector Current
100A
Collector Emitter Saturation Voltage Vce(on)
1.2kV
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2kV
Junction Temperature, Tj Max
150°C
No. of Pins
5Pins
Collector Emitter Voltage Max
1.2kV
Transistor Mounting
Panel
SVHC
To Be Advised
Transistor Polarity
N Channel
DC Collector Current
100A
Collector Emitter Saturation Voltage
3V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Stud
IGBT Technology
NPT IGBT [Ultrafast]
Product Range
-
Technical Docs (1)
Legislation and Environmental
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
