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SKIM909GD066HD
IGBT Module, 899 A, 600 V, 175 °C
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ManufacturerSEMIKRON
Manufacturer Part NoSKIM909GD066HD
Newark Part No.77R2509
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 26 week(s)
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSKIM909GD066HD
Newark Part No.77R2509
Technical Datasheet
Transistor PolarityN Channel
IGBT Configuration-
DC Collector Current899A
Continuous Collector Current899A
Collector Emitter Saturation Voltage600V
Collector Emitter Saturation Voltage Vce(on)600V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max175°C
Collector Emitter Voltage V(br)ceo900mV
Junction Temperature, Tj Max175°C
Transistor Case Style-
No. of Pins33Pins
IGBT TerminationStud
IGBT Technology-
Collector Emitter Voltage Max900mV
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
DC Collector Current
899A
Collector Emitter Saturation Voltage
600V
Power Dissipation Pd
-
Operating Temperature Max
175°C
Junction Temperature, Tj Max
175°C
No. of Pins
33Pins
IGBT Technology
-
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
-
Continuous Collector Current
899A
Collector Emitter Saturation Voltage Vce(on)
600V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
900mV
Transistor Case Style
-
IGBT Termination
Stud
Collector Emitter Voltage Max
900mV
Product Range
-
Technical Docs (1)
Associated Products
2 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate