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SEMIX653GB176HDS
IGBT Module, Dual, 619 A, 2.45 V, 150 °C, SEMiX 3s
Image is for illustrative purposes only. Please refer to product description.
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX653GB176HDS
Newark Part No.16M0126
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 5+ | $361.93 |
| 10+ | $356.80 |
| 25+ | $336.26 |
Price for:Each
Minimum: 6
Multiple: 6
$2,171.58
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerSEMIKRON
Manufacturer Part NoSEMIX653GB176HDS
Newark Part No.16M0126
Technical Datasheet
Transistor PolarityN Channel
IGBT ConfigurationDual
Continuous Collector Current619A
DC Collector Current619A
Collector Emitter Saturation Voltage Vce(on)2.45V
Collector Emitter Saturation Voltage2.45V
Power Dissipation Pd-
Power Dissipation-
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo1.2V
Junction Temperature, Tj Max150°C
Transistor Case StyleSEMiX 3s
No. of Pins16Pins
IGBT TerminationStud
Collector Emitter Voltage Max1.2V
IGBT TechnologyIGBT 3 [Trench]
Transistor MountingPanel
Product Range-
SVHCNo SVHC (15-Jun-2015)
Technical Specifications
Transistor Polarity
N Channel
Continuous Collector Current
619A
Collector Emitter Saturation Voltage Vce(on)
2.45V
Power Dissipation Pd
-
Operating Temperature Max
150°C
Junction Temperature, Tj Max
150°C
No. of Pins
16Pins
Collector Emitter Voltage Max
1.2V
Transistor Mounting
Panel
SVHC
No SVHC (15-Jun-2015)
IGBT Configuration
Dual
DC Collector Current
619A
Collector Emitter Saturation Voltage
2.45V
Power Dissipation
-
Collector Emitter Voltage V(br)ceo
1.2V
Transistor Case Style
SEMiX 3s
IGBT Termination
Stud
IGBT Technology
IGBT 3 [Trench]
Product Range
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jun-2015)
Download Product Compliance Certificate
Product Compliance Certificate