Toshiba Automotive Solutions | Newark Electronics

Toshiba Automotive Solutions

Automotive devices offer designers high reliability solutions,take a look at the latest Toshiba products for Automotive and high reliabilty applications

As vehicles become more complicated the semiconductor content steadily grows. This has been further accelerated through rapid growth of hybrid and electric vehicles.

Every vehicle contains numerous motors and automated funtions, so power switching, isolation, and electric motor control are now key elements in vehicle design.

Transportation as a segment is also diversifying, with e-scooters and e-bikes becoming common place while small electric vehicles such as e-tuk-tuks offer solutions for crowded inner city spaces.

This electrification trend is now also reflected in warehouse and logistics management solutions.

As a result of these trends a wide and varied range of high reliability semiconductor products are available for a variety of related transportation and industrial markets.

What are the key families from Toshiba that can support these “transportation” applications?

Power MOSFETs

Toshiba offers an extensive line-up of power MOSFETs for various automotive applications including 48V battery systems. The combination of low ON-resistance and advanced package technology makes Toshiba's power MOSFETs an ideal solution for reducing system losses, thereby contributing to energy-saving in automotive applications. All MOSFETs on this leaflet are qualified to AEC-Q101 or are under AEC-Q101 qualification.

Copper (Cu) connector and clip bonding SOP/DSOP Advance(WF), TSON Advance(WF) and DPAK+ use copper(Cu) connectors instead of conventional aluminium wire bonding. The newly developed S-TOGL and L-TOGL adopt the Cu clip structure (post-less structure), which is an evolution of the Cu connector structure, to achieve further improvement in high current performance. The Cu connector and clip contribute to the reduction of the package resistance and inductance.

A great example is the new 80V XPQR8308QB and 100V XPQ1R00AQB are based upon Toshiba’s new U-MOS X-H process. This gives low levels of on-resistance (RDS(ON)) values of 350A (XPQR8308QB) and 300A (XPQ1R00AQB) continuously with pulsed values (IDP) of 1050A and 900A respectively.