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SCT2750NYTB
Silicon Carbide MOSFET, Single, N Channel, 6 A, 1.7 kV, 0.75 ohm, TO-268 (D3PAK)
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ManufacturerROHM
Manufacturer Part NoSCT2750NYTB
Newark Part No.
Re-Reel28AC1982
Cut Tape28AC1982
Your Part Number
Technical Datasheet
No Longer Available
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Product Information
ManufacturerROHM
Manufacturer Part NoSCT2750NYTB
Newark Part No.
Re-Reel28AC1982
Cut Tape28AC1982
Technical Datasheet
MOSFET Module ConfigurationSingle
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id6A
Drain Source Voltage Vds1.7kV
On Resistance Rds(on)0.75ohm
Drain Source On State Resistance0.75ohm
Transistor Case StyleTO-268 (D3PAK)
Power Dissipation Pd57W
No. of Pins2Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation57W
Operating Temperature Max175°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Single
Channel Type
N Channel
Drain Source Voltage Vds
1.7kV
Drain Source On State Resistance
0.75ohm
Power Dissipation Pd
57W
Rds(on) Test Voltage
18V
Power Dissipation
57W
Product Range
-
SVHC
To Be Advised
Transistor Polarity
N Channel
Continuous Drain Current Id
6A
On Resistance Rds(on)
0.75ohm
Transistor Case Style
TO-268 (D3PAK)
No. of Pins
2Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
MSL
MSL 1 - Unlimited
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate