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RS1E200BNTB
MOSFET Transistor, N Channel, 20 A, 30 V, 0.0028 ohm, 10 V, 2.5 V RoHS Compliant: Yes
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoRS1E200BNTB
Newark Part No.71Y9255
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.82 |
| 10+ | $0.76 |
| 100+ | $0.67 |
| 500+ | $0.58 |
| 1000+ | $0.55 |
| 2500+ | $0.53 |
| 10000+ | $0.52 |
Price for:Each
Minimum: 1
Multiple: 1
$0.82
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoRS1E200BNTB
Newark Part No.71Y9255
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id20A
Drain Source On State Resistance3900µohm
On Resistance Rds(on)0.0028ohm
Transistor Case StyleHSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd25W
Gate Source Threshold Voltage Max2.5V
Power Dissipation25W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (23-Jan-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
Drain Source On State Resistance
3900µohm
Transistor Case Style
HSOP
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
8Pins
Product Range
-
MSL
-
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.0028ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
25W
Power Dissipation
25W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Alternatives for RS1E200BNTB
2 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability