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R6520KNZ4C13
MOSFET, N-CH, 650V, 20A, 150DEG C, 231W
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoR6520KNZ4C13Copy
Manufacturer Standard Lead Time25 weeks
Newark Part No.38AH5918
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 25 week(s)
| Quantity | Price |
|---|---|
| 1+ | $9.180 |
| 10+ | $7.950 |
| 25+ | $6.710 |
| 50+ | $5.480 |
| 100+ | $5.320 |
| 250+ | $5.160 |
| 500+ | $5.060 |
Price for:Each
Minimum: 1
Multiple: 1
$9.18
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoR6520KNZ4C13Copy
Manufacturer Standard Lead Time25 weeks
Newark Part No.38AH5918
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds650V
Continuous Drain Current Id20A
Drain Source On State Resistance0.205ohm
On Resistance Rds(on)0.185ohm
Transistor Case StyleTO-247
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd231W
Gate Source Threshold Voltage Max5V
Power Dissipation231W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (23-Jan-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
650V
Drain Source On State Resistance
0.205ohm
Transistor Case Style
TO-247
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
20A
On Resistance Rds(on)
0.185ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
231W
Power Dissipation
231W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (23-Jan-2024)
Technical Docs (1)
Alternatives for R6520KNZ4C13
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate