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HP8M31TB1
MOSFET, N/P-CH, 60V, 8.5A, 150DEG C, 7W
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 22 week(s)
Notify me when back in stock
| Quantity | Price |
|---|---|
| 1+ | $3.370 |
| 10+ | $1.960 |
| 25+ | $1.800 |
| 50+ | $1.640 |
| 100+ | $1.480 |
| 250+ | $1.380 |
| 500+ | $1.270 |
| 1000+ | $1.220 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$3.37
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoHP8M31TB1Copy
Newark Part No.29AK0128
Technical Datasheet
Channel TypeN and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id8.5A
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel8.5A
Continuous Drain Current Id P Channel8.5A
Drain Source On State Resistance N Channel0.065ohm
Drain Source On State Resistance P Channel0.07ohm
Transistor Case StyleHSOP
No. of Pins8Pins
Power Dissipation N Channel7W
Power Dissipation P Channel7W
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
8.5A
Drain Source On State Resistance P Channel
0.07ohm
No. of Pins
8Pins
Power Dissipation P Channel
7W
Product Range
-
MSL
-
Drain Source Voltage Vds
60V
Continuous Drain Current Id
8.5A
Continuous Drain Current Id N Channel
8.5A
Drain Source On State Resistance N Channel
0.065ohm
Transistor Case Style
HSOP
Power Dissipation N Channel
7W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate