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BSM400D12P3G002
SIC MOSFET, N-CH, 1.2KV, 400A, MODULE
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoBSM400D12P3G002
Newark Part No.88AH6169
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
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| Quantity | Price |
|---|---|
| 1+ | $1,282.350 |
Price for:Each
Minimum: 1
Multiple: 1
$1,282.35
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM400D12P3G002
Newark Part No.88AH6169
Technical Datasheet
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Transistor PolarityDual N Channel
Continuous Drain Current Id400A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Rds(on) Test Voltage-
Power Dissipation Pd1.57kW
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.57kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Half Bridge
Transistor Polarity
Dual N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
-
No. of Pins
-
Power Dissipation Pd
1.57kW
Power Dissipation
1.57kW
Product Range
-
Channel Type
Dual N Channel
Continuous Drain Current Id
400A
Drain Source On State Resistance
-
Transistor Case Style
Module
Rds(on) Test Voltage
-
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (2)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate