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BSM300C12P3E301
Silicon Carbide MOSFET, Chopper, N Channel, 300 A, 1.2 kV, Module
Image is for illustrative purposes only. Please refer to product description.
ManufacturerROHM
Manufacturer Part NoBSM300C12P3E301
Newark Part No.88AH6164
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 39 week(s)
| Quantity | Price |
|---|---|
| 1+ | $882.860 |
Price for:Each
Minimum: 1
Multiple: 1
$882.86
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerROHM
Manufacturer Part NoBSM300C12P3E301
Newark Part No.88AH6164
Technical Datasheet
MOSFET Module ConfigurationChopper
Channel TypeN Channel
Transistor PolarityN Channel
Continuous Drain Current Id300A
Drain Source Voltage Vds1.2kV
On Resistance Rds(on)-
Drain Source On State Resistance-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd1.36kW
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max5.6V
Power Dissipation1.36kW
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Chopper
Transistor Polarity
N Channel
Drain Source Voltage Vds
1.2kV
Drain Source On State Resistance
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
1.36kW
Product Range
-
Channel Type
N Channel
Continuous Drain Current Id
300A
On Resistance Rds(on)
-
Transistor Case Style
Module
Power Dissipation Pd
1.36kW
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability