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BSM120C12P2C201
SIC MOSFET, N-CH, 1.2KV, 134A, MODULE
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| Quantity | Price |
|---|---|
| 1+ | $321.010 |
Price for:Each
Minimum: 1
Multiple: 1
$321.01
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Product Information
ManufacturerROHM
Manufacturer Part NoBSM120C12P2C201
Newark Part No.88AH6157
Technical Datasheet
MOSFET Module ConfigurationChopper
Transistor PolarityN Channel
Channel TypeN Channel
Continuous Drain Current Id134A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance-
On Resistance Rds(on)-
Transistor Case StyleModule
No. of Pins-
Power Dissipation Pd935W
Rds(on) Test Voltage-
Gate Source Threshold Voltage Max4V
Power Dissipation935W
Operating Temperature Max150°C
Product Range-
SVHCTo Be Advised
Technical Specifications
MOSFET Module Configuration
Chopper
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
On Resistance Rds(on)
-
No. of Pins
-
Rds(on) Test Voltage
-
Power Dissipation
935W
Product Range
-
Transistor Polarity
N Channel
Continuous Drain Current Id
134A
Drain Source On State Resistance
-
Transistor Case Style
Module
Power Dissipation Pd
935W
Gate Source Threshold Voltage Max
4V
Operating Temperature Max
150°C
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate