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CM75DU-12H
IGBT Module, Dual [Half Bridge], 75 A, 2.4 V, 310 W, 150 °C, Module
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ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DU-12H
Newark Part No.09B2244
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 4 week(s)
Product Information
ManufacturerMITSUBISHI ELECTRIC
Manufacturer Part NoCM75DU-12H
Newark Part No.09B2244
Technical Datasheet
Transistor PolarityDual N Channel
IGBT ConfigurationDual [Half Bridge]
DC Collector Current75A
Continuous Collector Current75A
Collector Emitter Saturation Voltage2.4V
Collector Emitter Saturation Voltage Vce(on)2.4V
Power Dissipation Pd310W
Power Dissipation310W
Junction Temperature, Tj Max150°C
Operating Temperature Max150°C
Collector Emitter Voltage V(br)ceo600V
Transistor Case StyleModule
No. of Pins7Pins
IGBT TerminationTab
Collector Emitter Voltage Max600V
IGBT Technology-
Transistor MountingPanel
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
Dual N Channel
DC Collector Current
75A
Collector Emitter Saturation Voltage
2.4V
Power Dissipation Pd
310W
Junction Temperature, Tj Max
150°C
Collector Emitter Voltage V(br)ceo
600V
No. of Pins
7Pins
Collector Emitter Voltage Max
600V
Transistor Mounting
Panel
SVHC
To Be Advised
IGBT Configuration
Dual [Half Bridge]
Continuous Collector Current
75A
Collector Emitter Saturation Voltage Vce(on)
2.4V
Power Dissipation
310W
Operating Temperature Max
150°C
Transistor Case Style
Module
IGBT Termination
Tab
IGBT Technology
-
Product Range
-
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:No
RoHS Phthalates Compliant:No
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate