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NXH003P120M3F2PTHG
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 350 A, 1.2 kV, 0.005 ohm, Module
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| Quantity | Price |
|---|---|
| 1+ | $197.210 |
| 5+ | $193.400 |
| 10+ | $189.580 |
| 25+ | $185.770 |
Price for:Each
Minimum: 1
Multiple: 1
$197.21
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNXH003P120M3F2PTHG
Newark Part No.94AK7562
MOSFET Module ConfigurationHalf Bridge
Channel TypeDual N Channel
Continuous Drain Current Id350A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.005ohm
Transistor Case StyleModule
No. of Pins36Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation979W
Operating Temperature Max150°C
Product Range-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
350A
Drain Source On State Resistance
0.005ohm
No. of Pins
36Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
Dual N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
Module
Rds(on) Test Voltage
18V
Power Dissipation
979W
Product Range
-
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate