Print Page
NTMYS025N06CLTWG
MOSFET, N-CH, 60V, 21A, LFPAK
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTMYS025N06CLTWG
Newark Part No.39AH9065
Your Part Number
Technical Datasheet
10 In Stock
Need more?
Same day shipping
Order before 9pm EST standard shipping
Available in quantity shown
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.490 |
| 10+ | $1.030 |
| 25+ | $0.958 |
| 50+ | $0.887 |
| 100+ | $0.817 |
| 250+ | $0.719 |
| 500+ | $0.620 |
| 1000+ | $0.547 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMYS025N06CLTWG
Newark Part No.39AH9065
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id21A
On Resistance Rds(on)0.0229ohm
Drain Source On State Resistance0.0229ohm
Transistor Case StyleLFPAK
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation Pd24W
Power Dissipation24W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.0229ohm
Transistor Case Style
LFPAK
Rds(on) Test Voltage
10V
Power Dissipation Pd
24W
No. of Pins
4Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source On State Resistance
0.0229ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
Power Dissipation
24W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate