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NTMFWS1D5N08XT1G
Power MOSFET, N Channel, 80 V, 253 A, 1430 µohm, DFNW-EP, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 29 week(s)
| Quantity | Price |
|---|---|
| 1000+ | $1.720 |
Price for:Each (Supplied on Full Reel)
Minimum: 1500
Multiple: 1500
$2,580.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFWS1D5N08XT1G
Newark Part No.87AK0333
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id253A
Drain Source On State Resistance1430µohm
Transistor Case StyleDFNW-EP
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.6V
Power Dissipation194W
No. of Pins4Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
253A
Transistor Case Style
DFNW-EP
Rds(on) Test Voltage
10V
Power Dissipation
194W
Operating Temperature Max
175°C
Qualification
-
Drain Source Voltage Vds
80V
Drain Source On State Resistance
1430µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.6V
No. of Pins
4Pins
Product Range
-
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate