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NTMFS6H818NT1G
MOSFET, N-CH, 80V, 123A, DFN
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ManufacturerONSEMI
Manufacturer Part NoNTMFS6H818NT1G
Newark Part No.62AC7361
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 27 week(s)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTMFS6H818NT1G
Newark Part No.62AC7361
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id123A
On Resistance Rds(on)0.0031ohm
Drain Source On State Resistance3100µohm
Transistor Case StyleDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd136W
Gate Source Threshold Voltage Max4V
Power Dissipation136W
No. of Pins5Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
80V
On Resistance Rds(on)
0.0031ohm
Transistor Case Style
DFN
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
5Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
123A
Drain Source On State Resistance
3100µohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
136W
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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