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NTLJS2103PTBG
Power MOSFET, P Channel, 12 V, 5.9 A, 0.025 ohm, WDFN, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTLJS2103PTBGCopy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Full Reel75M5222
Cut Tape08R3958
Your Part Number
Available to Order
Manufacturer Standard Lead Time: 21 week(s)
Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 3000 | $0.323 | $969.00 |
| Total Price | $969.00 | ||
Cut Tape
| Quantity | Price |
|---|---|
| 3000+ | $0.323 |
| 6000+ | $0.317 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.381 |
| 9000+ | $0.373 |
| 15000+ | $0.366 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTLJS2103PTBGCopy
Manufacturer Standard Lead Time21 weeks
Newark Part No.
Full Reel75M5222
Cut Tape08R3958
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds12V
Continuous Drain Current Id5.9A
Drain Source On State Resistance0.025ohm
Transistor Case StyleWDFN
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max800mV
Power Dissipation1.9W
No. of Pins6Pins
Operating Temperature Max150°C
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
5.9A
Transistor Case Style
WDFN
Rds(on) Test Voltage
4.5V
Power Dissipation
1.9W
Operating Temperature Max
150°C
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
12V
Drain Source On State Resistance
0.025ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
800mV
No. of Pins
6Pins
MSL
MSL 1 - Unlimited
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate