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NTHS5441T1G
Power MOSFET, P Channel, 20 V, 5.3 A, 0.046 ohm, ChipFET, Surface Mount
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHS5441T1G
Newark Part No.88H5108
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.3A
On Resistance Rds(on)0.046ohm
Drain Source On State Resistance0.046ohm
Transistor MountingSurface Mount
Power Dissipation Pd1.3W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max1.2V
Transistor Case StyleChipFET
Power Dissipation1.3W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.046ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
ChipFET
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
5.3A
Drain Source On State Resistance
0.046ohm
Power Dissipation Pd
1.3W
Gate Source Threshold Voltage Max
1.2V
Power Dissipation
1.3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate