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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHS5404T1G
Newark Part No.98H0963
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id5.2A
On Resistance Rds(on)0.025ohm
Drain Source On State Resistance30mohm
Transistor MountingSurface Mount
Power Dissipation Pd1.3W
Rds(on) Test Voltage4.5V
Gate Source Threshold Voltage Max600mV
Transistor Case StyleChipFET
Power Dissipation1.3W
No. of Pins8Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (10-Jun-2022)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.025ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
ChipFET
No. of Pins
8Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
5.2A
Drain Source On State Resistance
30mohm
Power Dissipation Pd
1.3W
Gate Source Threshold Voltage Max
600mV
Power Dissipation
1.3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (10-Jun-2022)
Technical Docs (3)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (10-Jun-2022)
Download Product Compliance Certificate
Product Compliance Certificate
