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NTHD3100CT1G
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 3.9 A, 3.9 A, 0.064 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNTHD3100CT1GCopy
Newark Part No.
Full Reel86AK5823
Re-Reel50AC6487
Cut Tape50AC6487
Your Part Number
3,000 In Stock
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Packaging Options
| Packaging Type | Quantity | Unit Price: | Total |
|---|---|---|---|
| Cut Tape | 5 | $1.610 | $8.05 |
| Total Price | $8.05 | ||
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.610 |
| 10+ | $1.020 |
| 25+ | $0.903 |
| 50+ | $0.791 |
Full Reel
| Quantity | Price |
|---|---|
| 3000+ | $0.503 |
| 6000+ | $0.456 |
| 12000+ | $0.411 |
| 18000+ | $0.397 |
| 30000+ | $0.387 |
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNTHD3100CT1GCopy
Newark Part No.
Full Reel86AK5823
Re-Reel50AC6487
Cut Tape50AC6487
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id3.9A
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Drain Source On State Resistance N Channel0.064ohm
Drain Source On State Resistance P Channel0.064ohm
Transistor Case StyleChipFET
No. of Pins8Pins
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTHD3100CT1G is a N/P-channel Complementary MOSFET ideal for portable battery powered products. The device is designed for DC-to DC conversion circuits, load switch applications requiring level shift and drive small brushless DC motor applications.
- Small size
- 40% Smaller then TSOP-6 package
- Trench P-channel for low ON-resistance
- Low gate charge N-channel for test switching
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id P Channel
3.9A
Drain Source On State Resistance P Channel
0.064ohm
No. of Pins
8Pins
Power Dissipation P Channel
1.1W
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
3.9A
Drain Source Voltage Vds
20V
Continuous Drain Current Id N Channel
3.9A
Drain Source On State Resistance N Channel
0.064ohm
Transistor Case Style
ChipFET
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate