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NTH4L045N065SC1
Silicon Carbide MOSFET, Single, N Channel, 55 A, 650 V, 33 mohm, TO-247
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ManufacturerONSEMI
Manufacturer Part NoNTH4L045N065SC1
Newark Part No.81AJ0236
Product RangeEliteSiC Series
Your Part Number
Technical Datasheet
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| 1+ | $8.620 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTH4L045N065SC1
Newark Part No.81AJ0236
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id55A
Drain Source Voltage Vds650V
Drain Source On State Resistance33mohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max2.8V
Power Dissipation187W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
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Technical Specifications
MOSFET Module Configuration
Single
Continuous Drain Current Id
55A
Drain Source On State Resistance
33mohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
2.8V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
187W
Product Range
EliteSiC Series
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate