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NTGS3443T1G
Power MOSFET, P Channel, 20 V, 2 A, 0.065 ohm, TSOP, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNTGS3443T1G
Newark Part No.47T5420
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTGS3443T1G
Newark Part No.47T5420
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds20V
Continuous Drain Current Id2A
On Resistance Rds(on)0.058ohm
Drain Source On State Resistance0.065ohm
Transistor Case StyleTSOP
Transistor MountingSurface Mount
Rds(on) Test Voltage4.5V
Power Dissipation Pd2W
Gate Source Threshold Voltage Max950mV
Power Dissipation2W
No. of Pins6Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Alternatives for NTGS3443T1G
4 Products Found
Product Overview
The NTGS3443T1G is a P-channel Power MOSFET offers -20V drain source voltage and -2.2A continuous drain current. It is suitable for power management in portable and battery-powered products, cellular and cordless telephones and PCMCIA cards.
- Ultra-low RDS (ON)
- Higher efficiency extending battery life
- Miniature surface-mount package
- -55 to 150°C Operating temperature range
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
0.058ohm
Transistor Case Style
TSOP
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
950mV
No. of Pins
6Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
2A
Drain Source On State Resistance
0.065ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2W
Power Dissipation
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65