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ManufacturerONSEMI
Manufacturer Part NoNTD6416ANT4G
Newark Part No.40T1786
Your Part Number
Technical Datasheet
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Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 1+ | $1.980 |
| 10+ | $1.340 |
| 25+ | $1.210 |
| 50+ | $1.090 |
Full Reel
| Quantity | Price |
|---|---|
| 1+ | $0.811 |
| 3000+ | $0.786 |
| 6000+ | $0.732 |
| 12000+ | $0.678 |
| 18000+ | $0.660 |
| 30000+ | $0.649 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTD6416ANT4G
Newark Part No.40T1786
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id17A
Drain Source On State Resistance0.073ohm
On Resistance Rds(on)0.073ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Power Dissipation Pd71W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation71W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NTD6416ANT4G is a N-channel Power MOSFET offers 100V drain source voltage and 17A continuous drain current.
- Lower RDS (ON)
- High current capability
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
Applications
Power Management, Industrial
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
17A
On Resistance Rds(on)
0.073ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Power Dissipation
71W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.073ohm
Transistor Case Style
TO-252 (DPAK)
Power Dissipation Pd
71W
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Associated Products
3 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability