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NTBG040N120M3S
Silicon Carbide MOSFET, N Channel, 51 A, 1.2 kV, 0.052 ohm, D2PAK-7L
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ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Newark Part No.57AK6406
Product RangeEliteSiC Series
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $9.980 |
| 10+ | $7.490 |
| 25+ | $7.070 |
| 50+ | $6.630 |
| 100+ | $6.210 |
| 250+ | $6.000 |
| 500+ | $5.800 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNTBG040N120M3S
Newark Part No.57AK6406
Product RangeEliteSiC Series
Technical Datasheet
MOSFET Module Configuration-
Channel TypeN Channel
Continuous Drain Current Id51A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.052ohm
Transistor Case StyleD2PAK-7L
No. of Pins7Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.4V
Power Dissipation329W
Operating Temperature Max175°C
Product RangeEliteSiC Series
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
MOSFET Module Configuration
-
Continuous Drain Current Id
51A
Drain Source On State Resistance
0.052ohm
No. of Pins
7Pins
Gate Source Threshold Voltage Max
4.4V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
D2PAK-7L
Rds(on) Test Voltage
18V
Power Dissipation
329W
Product Range
EliteSiC Series
Technical Docs (2)
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Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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