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NSS35200MR6T1G
Bipolar (BJT) Single Transistor, PNP, 35 V, 2 A, 1.75 W, TSOP, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoNSS35200MR6T1G
Newark Part No.61K1271
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSS35200MR6T1G
Newark Part No.61K1271
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage V(br)ceo35V
Collector Emitter Voltage Max35V
Continuous Collector Current2A
DC Collector Current2A
Power Dissipation Pd1.75W
Power Dissipation1.75W
Transistor MountingSurface Mount
DC Current Gain hFE100hFE
Transistor Case StyleTSOP
No. of Pins6Pins
Transition Frequency100MHz
DC Current Gain hFE Min100hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (17-Jan-2023)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage Max
35V
DC Collector Current
2A
Power Dissipation
1.75W
DC Current Gain hFE
100hFE
No. of Pins
6Pins
DC Current Gain hFE Min
100hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
35V
Continuous Collector Current
2A
Power Dissipation Pd
1.75W
Transistor Mounting
Surface Mount
Transistor Case Style
TSOP
Transition Frequency
100MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (17-Jan-2023)
Download Product Compliance Certificate
Product Compliance Certificate