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NSBC113EF3T5G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNSBC113EF3T5G
Newark Part No.28X8045
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBC113EF3T5G
Newark Part No.28X8045
Technical Datasheet
Transistor PolaritySingle NPN
Collector Emitter Voltage Max NPN50V
Collector Emitter Voltage Max PNP-
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-1123
No. of Pins3 Pin
Transistor MountingSurface Mount
Power Dissipation297mW
Operating Temperature Max150°C
DC Current Gain hFE Min3hFE
Product Range-
Qualification-
SVHCNo SVHC (14-Jun-2023)
Technical Specifications
Transistor Polarity
Single NPN
Collector Emitter Voltage Max PNP
-
Base Input Resistor R1
-
Transistor Case Style
SOT-1123
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
50V
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
3 Pin
Power Dissipation
297mW
DC Current Gain hFE Min
3hFE
Qualification
-
SVHC
No SVHC (14-Jun-2023)
Technical Docs (3)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (14-Jun-2023)
Download Product Compliance Certificate
Product Compliance Certificate