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NSBA115EDXV6T1G
Bipolar Pre-Biased / Digital Transistor, BRT, Dual PNP, 50 V, 100 mA
Image is for illustrative purposes only. Please refer to product description.
Available to Order
Manufacturer Standard Lead Time: 20 week(s)
| Quantity | Price |
|---|---|
| 3000+ | $0.077 |
| 6000+ | $0.067 |
| 12000+ | $0.060 |
| 18000+ | $0.055 |
| 30000+ | $0.050 |
Price for:Each (Supplied on Full Reel)
Minimum: 4000
Multiple: 4000
$308.00
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Product Information
ManufacturerONSEMI
Manufacturer Part NoNSBA115EDXV6T1G
Newark Part No.42K2301
Technical Datasheet
Transistor PolarityDual PNP
Collector Emitter Voltage Max NPN-
Collector Emitter Voltage Max PNP50V
Continuous Collector Current100mA
Base Input Resistor R1-
Base Emitter Resistor R2-
Transistor Case StyleSOT-563
No. of Pins6 Pin
Transistor MountingSurface Mount
Power Dissipation500mW
Operating Temperature Max150°C
DC Current Gain hFE Min80hFE
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Dual PNP
Collector Emitter Voltage Max PNP
50V
Base Input Resistor R1
-
Transistor Case Style
SOT-563
Transistor Mounting
Surface Mount
Operating Temperature Max
150°C
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max NPN
-
Continuous Collector Current
100mA
Base Emitter Resistor R2
-
No. of Pins
6 Pin
Power Dissipation
500mW
DC Current Gain hFE Min
80hFE
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate