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NDT451AN
Power MOSFET, N Channel, 30 V, 7.2 A, 35 mohm, SOT-223, Surface Mount
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoNDT451AN
Newark Part No.58K2022
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 15 week(s)
Packaging Options
Cut Tape & Re-Reel
| Quantity | Price |
|---|---|
| 2500+ | $0.554 |
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoNDT451AN
Newark Part No.58K2022
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id7.2A
On Resistance Rds(on)0.03ohm
Drain Source On State Resistance35mohm
Transistor MountingSurface Mount
Power Dissipation Pd3W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.6V
Transistor Case StyleSOT-223
Power Dissipation3W
No. of Pins4Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The NDT451AN is a N-channel enhancement-mode Power FET produced using Fairchild's proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
- High density cell design for extremely low RDS (ON)
- High power and current handling capability in a widely used surface-mount package
Applications
Power Management, Motor Drive & Control, Industrial
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
0.03ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOT-223
No. of Pins
4Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
7.2A
Drain Source On State Resistance
35mohm
Power Dissipation Pd
3W
Gate Source Threshold Voltage Max
1.6V
Power Dissipation
3W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate