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MPSH10
Bipolar (BJT) Single Transistor, NPN, 25 V, 50 mA, 350 mW, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoMPSH10
Newark Part No.58K1963
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMPSH10
Newark Part No.58K1963
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo25V
Collector Emitter Voltage Max25V
Continuous Collector Current50mA
Power Dissipation Pd350mW
Power Dissipation350mW
DC Collector Current50mA
DC Current Gain hFE60hFE
Transistor MountingThrough Hole
Transistor Case StyleTO-92
No. of Pins3Pins
Transition Frequency650MHz
DC Current Gain hFE Min60hFE
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
25V
Power Dissipation Pd
350mW
DC Collector Current
50mA
Transistor Mounting
Through Hole
No. of Pins
3Pins
DC Current Gain hFE Min
60hFE
Qualification
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage V(br)ceo
25V
Continuous Collector Current
50mA
Power Dissipation
350mW
DC Current Gain hFE
60hFE
Transistor Case Style
TO-92
Transition Frequency
650MHz
Operating Temperature Max
150°C
Product Range
-
SVHC
To Be Advised
Technical Docs (1)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:To be advised
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate