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MMBT5179
Bipolar - RF Transistor, NPN, 12 V, 2 GHz, 225 mW, 50 mA, SOT-23
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ManufacturerONSEMI
Manufacturer Part NoMMBT5179
Newark Part No.31Y2780
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBT5179
Newark Part No.31Y2780
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage V(br)ceo12V
Collector Emitter Voltage Max12V
Transition Frequency2GHz
Power Dissipation Pd225mW
Power Dissipation225mW
DC Collector Current50mA
Continuous Collector Current50mA
Transistor Case StyleSOT-23
DC Current Gain hFE25hFE
RF Transistor CaseSOT-23
No. of Pins3Pins
DC Current Gain hFE Min25hFE
Transistor MountingSurface Mount
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCTo Be Advised
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage Max
12V
Power Dissipation Pd
225mW
DC Collector Current
50mA
Transistor Case Style
SOT-23
RF Transistor Case
SOT-23
DC Current Gain hFE Min
25hFE
Operating Temperature Max
150°C
Qualification
-
SVHC
To Be Advised
Collector Emitter Voltage V(br)ceo
12V
Transition Frequency
2GHz
Power Dissipation
225mW
Continuous Collector Current
50mA
DC Current Gain hFE
25hFE
No. of Pins
3Pins
Transistor Mounting
Surface Mount
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Alternatives for MMBT5179
1 Product Found
Associated Products
3 Products Found
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:To Be Advised
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65