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MMBT3904LT1G

Name: ONSEMI MMBT3904LT1G
Brand: ONSEMI
SKU: 83H7337RL
Availability: InStock

Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

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ONSEMI MMBT3904LT1G Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 300 mW, SOT-23, Surface Mount

ManufacturerONSEMI

Manufacturer Part NoMMBT3904LT1GCopy

Manufacturer Standard Lead Time17 weeks

Newark Part No.

Full Reel83K0942

Re-Reel83H7337RL

Cut Tape83H7337

Your Part Number

Technical Datasheet

Data Sheet

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Product Information

ManufacturerONSEMI

Manufacturer Part NoMMBT3904LT1GCopy

Manufacturer Standard Lead Time17 weeks

Newark Part No.

Full Reel83K0942

Re-Reel83H7337RL

Cut Tape83H7337

Technical Datasheet

Data Sheet

Product Overview

MMBT3904LT1G is a NPN silicon, surface mount, general purpose transistor.

Collector-emitter breakdown voltage is 40VDC min (TA = 25°C, IC = 1.0mAdc, IB = 0)
Collector-base breakdown voltage is 60VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
Emitter-base breakdown voltage is 6.0VDC min (IC = 0.1µmAdc, IE = 0, TA = 25°C)
Collector current - continuous is 900mAdc max (TA = 25°C)
Total Device Dissipation FR-5 Board is 225mW max (TA = 25°C)
Thermal resistance junction-to-ambient is 556°C/W max (TA = 25°C)
Collector cutoff current is 50nAdc max (VCE = 30VDC, VEB = 3.0Vdc)
Noise figure is 5.0dB max (VCE = 5.0VDC, IC = 100µADC, RS = 1.0kohm, f = 1.0KHz)
SOT-416 package
Junction temperature range from -65 to +150°C

Technical Docs (2)

MMBT3904LT1G Data Sheet

Product Change Notice EN

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Legislation and Environmental

US ECCN:EAR99

EU ECCN:Unknown

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes