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MMBFJ211
RF FET Transistor, 225 mW, SOT-23
Image is for illustrative purposes only. Please refer to product description.
35,250 In Stock
| Quantity | Price |
|---|---|
| 1000+ | $0.214 |
| 5000+ | $0.194 |
Price for:Each (Supplied on Cut Tape)
Minimum: 3000
Multiple: 3000
$642.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoMMBFJ211Copy
Newark Part No.10AN4202
Technical Datasheet
Drain Source Voltage Vds-
Continuous Drain Current Id-
Power Dissipation225mW
Operating Frequency Min-
Operating Frequency Max-
Transistor Case StyleSOT-23
No. of Pins3Pins
Operating Temperature Max150°C
Channel TypeN Channel
Transistor MountingSurface Mount
Product Range-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Drain Source Voltage Vds
-
Power Dissipation
225mW
Operating Frequency Max
-
No. of Pins
3Pins
Channel Type
N Channel
Product Range
-
Continuous Drain Current Id
-
Operating Frequency Min
-
Transistor Case Style
SOT-23
Operating Temperature Max
150°C
Transistor Mounting
Surface Mount
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate