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MJD117-1G
TRANSISTOR, PNP, -100V, -2A, TO-252
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ManufacturerONSEMI
Manufacturer Part NoMJD117-1G
Newark Part No.30AC9899
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoMJD117-1G
Newark Part No.30AC9899
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max100V
Collector Emitter Voltage V(br)ceo100V
Power Dissipation Pd20W
Transition Frequency25MHz
Continuous Collector Current2A
DC Collector Current2A
Power Dissipation20W
RF Transistor CaseTO-252 (DPAK)
No. of Pins3Pins
DC Current Gain hFE200hFE
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Operating Temperature Max150°C
DC Current Gain hFE Min1000hFE
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
100V
Transition Frequency
25MHz
DC Collector Current
2A
RF Transistor Case
TO-252 (DPAK)
DC Current Gain hFE
200hFE
Transistor Mounting
Surface Mount
DC Current Gain hFE Min
1000hFE
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
100V
Power Dissipation Pd
20W
Continuous Collector Current
2A
Power Dissipation
20W
No. of Pins
3Pins
Transistor Case Style
TO-252 (DPAK)
Operating Temperature Max
150°C
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (15-Jan-2018)
Technical Docs (1)
Legislation and Environmental
US ECCN:Unknown
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate