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KSC1008YBU
Bipolar (BJT) Single Transistor, NPN, 60 V, 700 mA, 800 mW, TO-92, Through Hole
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ManufacturerONSEMI
Manufacturer Part NoKSC1008YBU
Newark Part No.46AC0927
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoKSC1008YBU
Newark Part No.46AC0927
Technical Datasheet
Transistor PolarityNPN
Collector Emitter Voltage Max60V
Collector Emitter Voltage V(br)ceo60V
Continuous Collector Current700mA
Power Dissipation800mW
Power Dissipation Pd800mW
Transistor Case StyleTO-92
DC Collector Current700mA
DC Current Gain hFE120hFE
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency50MHz
DC Current Gain hFE Min120hFE
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
Product Overview
- NPN epitaxial silicon transistor
- Low frequency amplifier medium speed switching
Technical Specifications
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
60V
Power Dissipation
800mW
Transistor Case Style
TO-92
DC Current Gain hFE
120hFE
No. of Pins
3Pins
DC Current Gain hFE Min
120hFE
Product Range
-
MSL
MSL 1 - Unlimited
Collector Emitter Voltage Max
60V
Continuous Collector Current
700mA
Power Dissipation Pd
800mW
DC Collector Current
700mA
Transistor Mounting
Through Hole
Transition Frequency
50MHz
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
WARNINGProposition 65