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| Quantity | Price |
|---|---|
| 1+ | $1.530 |
| 10+ | $1.100 |
| 100+ | $0.866 |
| 500+ | $0.861 |
| 1000+ | $0.698 |
| 2500+ | $0.644 |
| 10000+ | $0.587 |
Price for:Each
Minimum: 1
Multiple: 1
$1.53
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQU8P10TUCopy
Manufacturer Standard Lead Time52 weeks
Newark Part No.54AH8781
Product RangeQFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.53ohm
On Resistance Rds(on)0.41ohm
Transistor Case StyleTO-251
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation44W
Power Dissipation Pd44W
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.53ohm
Transistor Case Style
TO-251
Rds(on) Test Voltage
10V
Power Dissipation
44W
No. of Pins
3Pins
Product Range
QFET
SVHC
No SVHC (15-Jan-2018)
Transistor Polarity
P Channel
Continuous Drain Current Id
6.6A
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
4V
Power Dissipation Pd
44W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate