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FQU17P06TU
Power MOSFET, P Channel, 60 V, 12 A, 0.11 ohm, TO-251, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQU17P06TUCopy
Newark Part No.23M6300
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id12A
On Resistance Rds(on)0.11ohm
Drain Source On State Resistance0.11ohm
Transistor MountingThrough Hole
Power Dissipation Pd44W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Transistor Case StyleTO-251
Power Dissipation44W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
MSL-
SVHCLead
Product Overview
The FQU17P06 is a P-channel enhancement mode power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength.
- Low gate charge
- 100% Avalanche tested
- Low crss (typical 80pF)
- ±25V Gate-source voltage
Applications
Power Management, Motor Drive & Control, Audio
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.11ohm
Transistor Mounting
Through Hole
Rds(on) Test Voltage
10V
Transistor Case Style
TO-251
No. of Pins
3Pins
Qualification
-
MSL
-
Transistor Polarity
P Channel
Continuous Drain Current Id
12A
Drain Source On State Resistance
0.11ohm
Power Dissipation Pd
44W
Gate Source Threshold Voltage Max
4V
Power Dissipation
44W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
