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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQT3P20TFCopy
Newark Part No.46AC0866
Product RangeQFET
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id670mA
Drain Source On State Resistance2.06ohm
On Resistance Rds(on)2.06ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Power Dissipation Pd2.5W
Rds(on) Test Voltage-10V
Gate Source Threshold Voltage Max-5V
Power Dissipation2.5W
No. of Pins4Pins
Operating Temperature Max150°C
Product RangeQFET
Qualification-
SVHCNo SVHC (15-Jan-2018)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
200V
Drain Source On State Resistance
2.06ohm
Transistor Case Style
SOT-223
Power Dissipation Pd
2.5W
Gate Source Threshold Voltage Max
-5V
No. of Pins
4Pins
Product Range
QFET
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
670mA
On Resistance Rds(on)
2.06ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
-10V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (15-Jan-2018)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (15-Jan-2018)
Download Product Compliance Certificate
Product Compliance Certificate