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FQPF10N20C
Power MOSFET, N Channel, 200 V, 9.5 A, 0.29 ohm, TO-220F, Through Hole
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No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQPF10N20CCopy
Newark Part No.31Y1535
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9.5A
On Resistance Rds(on)0.29ohm
Drain Source On State Resistance0.29ohm
Transistor Case StyleTO-220F
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Power Dissipation Pd38W
Gate Source Threshold Voltage Max4V
Power Dissipation38W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (17-Jan-2022)
Product Overview
The FQPF10N20C is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% avalanche tested
- 20nC typical low gate charge
- 40.5pF typical low Crss
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.29ohm
Transistor Case Style
TO-220F
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
-
Channel Type
N Channel
Continuous Drain Current Id
9.5A
Drain Source On State Resistance
0.29ohm
Transistor Mounting
Through Hole
Power Dissipation Pd
38W
Power Dissipation
38W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (17-Jan-2022)
Legislation and Environmental
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (17-Jan-2022)
Download Product Compliance Certificate
Product Compliance Certificate