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ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM
Newark Part No.31Y1531
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.290 |
| 10+ | $0.874 |
| 25+ | $0.788 |
| 50+ | $0.701 |
| 100+ | $0.615 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM
Newark Part No.31Y1531
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
On Resistance Rds(on)0.41ohm
Drain Source On State Resistance0.53ohm
Transistor Case StyleTO-252AA
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd44W
Gate Source Threshold Voltage Max4V
Power Dissipation44W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FQD8P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 12nC typical low gate charge
- 30pF typical low Crss
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds
100V
On Resistance Rds(on)
0.41ohm
Transistor Case Style
TO-252AA
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Transistor Polarity
P Channel
Continuous Drain Current Id
6.6A
Drain Source On State Resistance
0.53ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
44W
Power Dissipation
44W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (3)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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