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ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM-F085
Newark Part No.54AH8757
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $1.510 |
| 10+ | $1.160 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD8P10TM-F085
Newark Part No.54AH8757
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id6.6A
Drain Source On State Resistance0.53ohm
On Resistance Rds(on)0.41ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max4V
Power Dissipation Pd44W
Power Dissipation44W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCLead (25-Jun-2025)
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.53ohm
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation Pd
44W
No. of Pins
3Pins
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
P Channel
Continuous Drain Current Id
6.6A
On Resistance Rds(on)
0.41ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
4V
Power Dissipation
44W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
Lead (25-Jun-2025)
Technical Docs (1)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
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Product Compliance Certificate
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