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ManufacturerONSEMI
Manufacturer Part NoFQD1N80TM
Newark Part No.15R3443
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD1N80TM
Newark Part No.15R3443
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds800V
Continuous Drain Current Id1A
On Resistance Rds(on)15.5ohm
Drain Source On State Resistance20ohm
Transistor MountingSurface Mount
Power Dissipation Pd45W
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Transistor Case StyleTO-252AA
Power Dissipation45W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQD1N80TM is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (5.5nC)
- Low Crss (2.7pF)
- 100% avalanche tested
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
800V
On Resistance Rds(on)
15.5ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
TO-252AA
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
1A
Drain Source On State Resistance
20ohm
Power Dissipation Pd
45W
Gate Source Threshold Voltage Max
5V
Power Dissipation
45W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate