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ManufacturerONSEMI
Manufacturer Part NoFQD12N20LTM
Newark Part No.06R2503
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQD12N20LTM
Newark Part No.06R2503
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9A
On Resistance Rds(on)0.22ohm
Drain Source On State Resistance0.28ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd2.5W
Gate Source Threshold Voltage Max2V
Transistor Case StyleTO-252AA
Power Dissipation2.5W
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCLead
Product Overview
The FQD12N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- 100% Avalanche tested
- 16nC Typical low gate charge
- 17pF Typical low Crss
Applications
Power Management, Lighting, Industrial
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
200V
On Resistance Rds(on)
0.22ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
2.5W
Transistor Case Style
TO-252AA
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
N Channel
Continuous Drain Current Id
9A
Drain Source On State Resistance
0.28ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
Power Dissipation
2.5W
Operating Temperature Max
150°C
Product Range
-
SVHC
Lead
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate
Product traceability