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ManufacturerONSEMI
Manufacturer Part NoFQB47P06TM-AM002
Newark Part No.
Re-Reel61M6403
Cut Tape61M6403
Your Part Number
Technical Datasheet
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| Quantity | Price |
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| 1+ | $4.320 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB47P06TM-AM002
Newark Part No.
Re-Reel61M6403
Cut Tape61M6403
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id47A
On Resistance Rds(on)0.026ohm
Drain Source On State Resistance0.026ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Power Dissipation Pd160W
Rds(on) Test Voltage-10V
Gate Source Threshold Voltage Max-4V
Power Dissipation160W
No. of Pins2Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCLead (25-Jun-2025)
Product Overview
The FQB47P06TM_AM002 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
- 100% avalanche tested
- 84nC typical low gate charge
- 320pF typical low Crss
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
0.026ohm
Transistor Case Style
TO-263 (D2PAK)
Power Dissipation Pd
160W
Gate Source Threshold Voltage Max
-4V
No. of Pins
2Pins
Product Range
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
47A
Drain Source On State Resistance
0.026ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
-10V
Power Dissipation
160W
Operating Temperature Max
175°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Technical Docs (2)
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
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