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ManufacturerONSEMI
Manufacturer Part NoFQB27P06TM
Newark Part No.58K1517
Your Part Number
Technical Datasheet
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFQB27P06TM
Newark Part No.58K1517
Technical Datasheet
Transistor PolarityP Channel
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id27A
Drain Source On State Resistance70mohm
On Resistance Rds(on)0.055ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Power Dissipation Pd120W
Gate Source Threshold Voltage Max4V
Power Dissipation120W
No. of Pins3Pins
Operating Temperature Max175°C
Qualification-
Product Range-
SVHCLead
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Product Overview
The FQB27P06TM is a -60V P-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications. This product is general usage and suitable for many different applications.
- Low gate charge
- 100% avalanche tested
- 175°C rated junction temperature
Technical Specifications
Transistor Polarity
P Channel
Drain Source Voltage Vds
60V
Drain Source On State Resistance
70mohm
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
4V
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Channel Type
P Channel
Continuous Drain Current Id
27A
On Resistance Rds(on)
0.055ohm
Transistor Mounting
Surface Mount
Power Dissipation Pd
120W
Power Dissipation
120W
Operating Temperature Max
175°C
Product Range
-
SVHC
Lead
Technical Docs (2)
Associated Products
5 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:Lead
Download Product Compliance Certificate
Product Compliance Certificate