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FDV303N
Power MOSFET, N Channel, 25 V, 680 mA, 0.45 ohm, SOT-23, Surface Mount
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ManufacturerONSEMI
Manufacturer Part NoFDV303N
Newark Part No.58K8857
Your Part Number
Technical Datasheet
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| Quantity | Price |
|---|---|
| 1+ | $0.37 |
| 25+ | $0.24 |
| 50+ | $0.20 |
| 100+ | $0.16 |
| 250+ | $0.14 |
| 500+ | $0.12 |
| 1000+ | $0.11 |
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Product Information
ManufacturerONSEMI
Manufacturer Part NoFDV303N
Newark Part No.58K8857
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds25V
Continuous Drain Current Id680mA
On Resistance Rds(on)0.33ohm
Drain Source On State Resistance0.45ohm
Transistor MountingSurface Mount
Power Dissipation Pd350mW
Rds(on) Test Voltage4.5V
Transistor Case StyleSOT-23
Gate Source Threshold Voltage Max800mV
Power Dissipation350mW
No. of Pins3Pins
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDV303N is a surface mount, N channel logic level enhancement mode digital FET in SOT-23 package. This device features high cell density, DMOS technology which has been tailored to minimize the onstate resistance and maintain low gate drive conditions. It has excellent on state resistance even at gate drive voltages as low as 2.5V and designed for application in battery circuits using either one lithium or three cadmium or NHM cells, inverters, high efficiency miniature discrete DC/DC conversion in electronic devices like cellular phones and pagers.
- Drain to source voltage (Vds) of 25V
- Gate to source voltage of 8V
- Continuous drain current (Id) of 680mA
- Power dissipation (Pd) of 350mW
- Low on state resistance of 330mohm at Vgs 4.5V
- Operating temperature range from -55°C to 150°C
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
25V
On Resistance Rds(on)
0.33ohm
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
800mV
No. of Pins
3Pins
Qualification
-
MSL
MSL 1 - Unlimited
Transistor Polarity
N Channel
Continuous Drain Current Id
680mA
Drain Source On State Resistance
0.45ohm
Power Dissipation Pd
350mW
Transistor Case Style
SOT-23
Power Dissipation
350mW
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
8 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
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Product Compliance Certificate
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