Print Page
FDS8958B
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 6.4 A, 6.4 A, 0.021 ohm
Image is for illustrative purposes only. Please refer to product description.
10 In Stock
Need more?
Same day shipping
Order before 8pm EST standard shipping
Available in quantity shown
| Quantity | Price | Promotional price |
|---|---|---|
| 1+ | $1.070 | $0.107 |
| 10+ | $0.869 | $0.107 |
| 25+ | $0.770 | $0.107 |
| 50+ | $0.684 | $0.107 |
| 100+ | $0.587 | $0.107 |
| 250+ | $0.516 | $0.107 |
| 500+ | $0.409 | $0.107 |
| 1000+ | $0.392 | $0.107 |
Price for:Each (Supplied on Cut Tape)
Minimum: 1
Multiple: 1
$0.11
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS8958B
Newark Part No.31Y1411
Technical Datasheet
Channel TypeComplementary N and P Channel
Continuous Drain Current Id6.4A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel6.4A
Continuous Drain Current Id P Channel6.4A
Drain Source On State Resistance N Channel0.021ohm
Drain Source On State Resistance P Channel0.021ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
Product Overview
The FDS8958B is a dual N/P-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. The device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. It is suitable for use with DC-to-DC converter, BLU and motor drive inverter applications.
Applications
Industrial, Power Management
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
6.4A
Drain Source On State Resistance P Channel
0.021ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Product Range
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
6.4A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
6.4A
Drain Source On State Resistance N Channel
0.021ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate