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FDS6986AS
Dual MOSFET, N Channel, 30 V, 30 V, 7.9 A, 7.9 A, 0.017 ohm
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ManufacturerONSEMI
Manufacturer Part NoFDS6986AS
Newark Part No.15R3434
Your Part Number
Technical Datasheet
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6986AS
Newark Part No.15R3434
Technical Datasheet
Channel TypeN Channel
Continuous Drain Current Id7.9A
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel7.9A
Continuous Drain Current Id P Channel7.9A
Drain Source On State Resistance N Channel0.017ohm
Drain Source On State Resistance P Channel0.017ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
7.9A
Drain Source On State Resistance P Channel
0.017ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Continuous Drain Current Id
7.9A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
7.9A
Drain Source On State Resistance N Channel
0.017ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (3)
Alternatives for FDS6986AS
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Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate