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FDS6930B
Dual MOSFET, N Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.031 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6930B
Newark Part No.86K1390
Your Part Number
Technical Datasheet
Available to Order
Manufacturer Standard Lead Time: 10 week(s)
| Quantity | Price |
|---|---|
| 1+ | $0.332 |
| 3000+ | $0.327 |
| 6000+ | $0.307 |
| 12000+ | $0.293 |
| 18000+ | $0.278 |
| 30000+ | $0.269 |
Price for:Each (Supplied on Full Reel)
Minimum: 2500
Multiple: 2500
$830.00
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6930B
Newark Part No.86K1390
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel5.5A
Continuous Drain Current Id P Channel5.5A
Drain Source On State Resistance N Channel0.031ohm
Drain Source On State Resistance P Channel0.031ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2025)
Product Overview
The FDS6930B is a dual N-channel Logic Level MOSFET produced using advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance trench technology for extremely low RDS (ON)
- High power and current handling capability
- Junction and storage temperature range from -55 to 150°C
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
5.5A
Drain Source On State Resistance P Channel
0.031ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds
30V
Continuous Drain Current Id N Channel
5.5A
Drain Source On State Resistance N Channel
0.031ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate