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FDS6930A
Dual MOSFET, N Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.032 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerONSEMI
Manufacturer Part NoFDS6930A
Newark Part No.38C7176
Your Part Number
Technical Datasheet
No Longer Available
Product Information
ManufacturerONSEMI
Manufacturer Part NoFDS6930A
Newark Part No.38C7176
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id5.5A
Drain Source Voltage Vds P Channel30V
Drain Source Voltage Vds30V
Continuous Drain Current Id N Channel5.5A
Continuous Drain Current Id P Channel5.5A
Drain Source On State Resistance N Channel0.032ohm
Drain Source On State Resistance P Channel0.032ohm
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2W
Power Dissipation P Channel2W
Operating Temperature Max150°C
Qualification-
Product Range-
SVHCNo SVHC (25-Jun-2020)
Product Overview
The FDS6930A is a dual N-channel logic level MOSFET produced using advanced PowerTrench™ process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
- Fast switching speed
- Low gate charge
- High performance Trench technology for extremely low RDS (ON)
- High power and current handling capability
- ±20V Gate to source voltage
- 5.5A Continuous drain current
- 20A Pulsed drain current
Applications
Industrial, Power Management
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
30V
Continuous Drain Current Id P Channel
5.5A
Drain Source On State Resistance P Channel
0.032ohm
No. of Pins
8Pins
Power Dissipation P Channel
2W
Qualification
-
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
5.5A
Drain Source On State Resistance N Channel
0.032ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
2W
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (25-Jun-2020)
Technical Docs (2)
Legislation and Environmental
US ECCN:EAR99
EU ECCN:Unknown
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2020)
Download Product Compliance Certificate
Product Compliance Certificate